The PSMN006-20K/T3 is a surface-mount N-channel power MOSFET from NXP, packaged in a small outline (SO) case. It can handle a continuous drain current of 32A and has a drain to source breakdown voltage of 20V. The device features a drain to source resistance of 5mR and a power dissipation of 8.3W. The PSMN006-20K/T3 operates over a temperature range of -55°C to 150°C and is available in tape and reel packaging.
PackageSO
PolarityN-CHANNEL
Power8.3W
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Technical Specifications
NXP PSMN006-20K/T3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5mR |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 10V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3W |
| Turn-Off Delay Time | 190ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN006-20K/T3 Datasheet
Download the complete datasheet for NXP PSMN006-20K/T3 to view detailed technical specifications.
No datasheet is available for this part.