The PSMN038-100K/T3 is an N-Channel MOSFET from NXP with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 6.3A and a drain to source breakdown voltage of 100V. The device has a drain to source resistance of 38mR and a power dissipation of 3.5W. It is available in a SO package and is packaged in tape and reel quantities of 2500. The PSMN038-100K/T3 is not RoHS compliant.
PackageSO
PolarityN-CHANNEL
Power3.5W
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Technical Specifications
NXP PSMN038-100K/T3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 38mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP PSMN038-100K/T3 Datasheet
Download the complete datasheet for NXP PSMN038-100K/T3 to view detailed technical specifications.
No datasheet is available for this part.