The PSMN085-150K/T3 is a N-Channel MOSFET with a drain to source breakdown voltage of 150V and a continuous drain current of 3.5A. It features a drain to source resistance of 85mR and a gate to source voltage of 20V. The device operates over a temperature range of -55°C to 150°C and is packaged in a SO package. The PSMN085-150K/T3 is available in quantities of 2500 per reel.
NXP PSMN085-150K/T3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 85mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 52ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
