NXP
PSMN1R0-30YLD
NXP PSMN1R0-30YLD MOSFET Transistor, N Channel, 100 A, 30 V, 0.00079 ohm, 10 V, 1.75 V
PackageSOT-669
Resistance0.00079R
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Technical Specifications
NXP PSMN1R0-30YLD technical specifications.
General
Package/Case
SOT-669
Continuous Drain Current (ID)
100A
Drain to Source Voltage (Vdss)
30V
Max Operating Temperature
175°C
Max Power Dissipation
238W
Reach SVHC Compliant
No
Resistance
0.00079R
RoHS Compliant
No
Threshold Voltage
1.75V
Compliance
RoHS
Not Compliant
Datasheet
NXP PSMN1R0-30YLD Datasheet
Download the complete datasheet for NXP PSMN1R0-30YLD to view detailed technical specifications.
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