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Technical Specifications
NXP PUMD10115 technical specifications.
General
| Package/Case | TSSOP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 100mV |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Series | 50V |
| Termination | SMD/SMT |
| Transition Frequency | 230MHz |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PUMD10115 Datasheet
Download the complete datasheet for NXP PUMD10115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.