The 2N3906 PNP transistor is a TO-226-3 packaged device with a maximum collector current of 200mA and a maximum power dissipation of 625mW. It operates over a temperature range of -55°C to 150°C and has a gain bandwidth product of 250MHz. The transistor has a collector-emitter breakdown voltage of 40V and a collector-base voltage of 40V. It is a PNP type transistor with a minimum current gain of 100.
PackageTO-226-3
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi 2N3906(D11Z) technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | 2N3906 |
| Transition Frequency | 250MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N3906(D11Z) Datasheet
Download the complete datasheet for Onsemi 2N3906(D11Z) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
