The 2N4403_D29Z is a PNP transistor with a maximum collector current of 600mA and a maximum power dissipation of 625mW. It has a maximum operating temperature range of -55°C to 150°C and is packaged in a TO-226-3 case for through hole mounting. The transistor has a gain bandwidth product of 200MHz and a minimum current gain of 100. It is rated for a collector-emitter breakdown voltage of 40V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2N4403_D29Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector-emitter Voltage-Max | 750mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi 2N4403_D29Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
