
The 2N4403NLBU is a PNP transistor with a collector base voltage of 40V and a maximum collector current of 600mA. It has a maximum power dissipation of 625mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a TO-226-3 case and is available in bulk quantities of 1000. It is RoHS compliant and not radiation hardened.
Onsemi 2N4403NLBU technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector-emitter Voltage-Max | 750mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N4403NLBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
