The 2N5088_D11Z is an NPN transistor from Onsemi with a collector base voltage rating of 35V and a maximum collector current of 100mA. It has a gain bandwidth product of 50MHz and a collector emitter saturation voltage of 500mV. The device is packaged in a TO-226-3 case and is available in quantities of 2000 on tape and reel. The transistor is rated for operation between -55°C and 150°C and has a maximum power dissipation of 625mW.
PackageTO-226-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N5088_D11Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 4.5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 300 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 50MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2N5088_D11Z Datasheet
Download the complete datasheet for Onsemi 2N5088_D11Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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