The 2N5089_J18Z is a TO-92 packaged NPN transistor from Onsemi. It has a collector-emitter breakdown voltage of 25V and a maximum collector current of 100mA. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. It has a gain bandwidth product of 50MHz and a maximum power dissipation of 625mW.
Frequency50MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N5089_J18Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 400 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5089_J18Z Datasheet
Download the complete datasheet for Onsemi 2N5089_J18Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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