The 2N5460_D27Z is a P-channel MOSFET from Onsemi with a maximum gate to source voltage of 40V and an input capacitance of 7pF. It is packaged in a TO-92-3 case and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 350mW. The 2N5460_D27Z is RoHS compliant and available in quantities of 2000 per reel.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power350mW
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Technical Specifications
Onsemi 2N5460_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Gate to Source Voltage (Vgs) | 40V |
| Input Capacitance | 7pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | 2N5460 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5460_D27Z Datasheet
Download the complete datasheet for Onsemi 2N5460_D27Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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