The 2N5550_D26Z is a TO-92-3 packaged NPN transistor with a collector-emitter breakdown voltage of 140V and a maximum collector current of 600mA. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. This device is RoHS compliant and suitable for through-hole mounting.
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Onsemi 2N5550_D26Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| RoHS | Compliant |
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