The 2N5550 is a high-speed NPN transistor with a collector base voltage of 160V and a maximum collector current of 600mA. It features a gain bandwidth product of 300MHz and a transition frequency of 300MHz. The transistor is packaged in a TO-226-3 case and is suitable for through-hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-226-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N5550_J24Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 60 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 3500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | 2N5550 |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5550_J24Z Datasheet
Download the complete datasheet for Onsemi 2N5550_J24Z to view detailed technical specifications.
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