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Technical Specifications
Onsemi 2N5551_J18Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5551_J18Z Datasheet
Download the complete datasheet for Onsemi 2N5551_J18Z to view detailed technical specifications.
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