
The 2N6076_D27Z is a PNP transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 500mA. It is packaged in a TO-92-3 case and is suitable for through-hole mounting. The transistor has a maximum power dissipation of 625mW and is rated for operation between -55°C and 150°C. It is compliant with RoHS regulations and is available in quantities of 2000 per reel.
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Onsemi 2N6076_D27Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | 2N6076 |
| DC Rated Voltage | -25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6076_D27Z to view detailed technical specifications.
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