The 2N6076_D75Z PNP transistor features a collector-emitter breakdown voltage of 25V and a maximum collector current of 500mA. It has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-92-3 package and is available in quantities of 2000 in an ammo pack. It is a lead-free device and is not radiation hardened.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2N6076_D75Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2N6076_D75Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Radiation Hardening | No |
| Series | 2N6076 |
| DC Rated Voltage | -25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6076_D75Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
