The 4N29 Series NPN transistor features a collector emitter saturation voltage of 1V and a maximum collector current of 150mA. It operates within a temperature range of -55°C to 100°C and has a maximum power dissipation of 250mW. The transistor is packaged in a PDIP package and is available in bulk packaging.
Sign in to ask questions about the Onsemi 4N29_Q datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 4N29_Q technical specifications.
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1V |
| Input Type | DC |
| Max Collector Current | 150mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Packaging | Bulk |
| Series | 4N29 |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi 4N29_Q to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
