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Technical Specifications
Onsemi 4N35M technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Forward Current | 60mA |
| Height | 5.08mm |
| Lead Free | Lead Free |
| Length | 8.89mm |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Reverse Voltage (DC) | 6V |
| RoHS Compliant | Yes |
| Series | 4N35M |
| Weight | 0.855g |
| Width | 6.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 4N35M Datasheet
Download the complete datasheet for Onsemi 4N35M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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