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Technical Specifications
Onsemi 4N35M technical specifications.
General
Package/Case
PDIP
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
300mV
Forward Current
60mA
Height
5.08mm
Lead Free
Lead Free
Length
8.89mm
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Channels
1
Number of Circuits
1
Package Quantity
1000
Packaging
Bulk
Reverse Voltage (DC)
6V
RoHS Compliant
Yes
Series
4N35M
Weight
0.855g
Width
6.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 4N35M Datasheet
Download the complete datasheet for Onsemi 4N35M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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