The 4N35M DC input darlington transistor features a collector emitter saturation voltage of 300mV and a current transfer ratio of 100%. It is available in a surface mount package with a maximum operating temperature of 100°C and a minimum operating temperature of -40°C. The device is suitable for applications requiring a high current transfer ratio and can dissipate up to 250mW of power.
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Onsemi 4N35SR2M_F132 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Saturation Voltage | 300mV |
| Current Transfer Ratio | 100% |
| Input Type | DC |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250mW |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Series | 4N35M |
| Weight | 0.028572oz |
| RoHS | Compliant |
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