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Technical Specifications
Onsemi 4N37TM technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Forward Current | 60mA |
| Input Type | DC |
| Isolation Voltage | 5.25kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 30V |
| Max Power Dissipation | 150mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 4N37TM Datasheet
Download the complete datasheet for Onsemi 4N37TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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