The BC212B_D27Z PNP transistor from Onsemi features a TO-92-3 package and a maximum operating temperature of 150°C. It has a collector-emitter breakdown voltage of 50V and a collector-emitter saturation voltage of 50V. The device can handle a continuous collector current of 100mA and a maximum power dissipation of 350mW. It is suitable for through-hole mounting and has a minimum operating temperature of -55°C.
PackageTO-92-3
MountingThrough Hole
PolarityPNP
Power350mW
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Technical Specifications
Onsemi BC212B_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Series | BC212 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC212B_D27Z Datasheet
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