The BC557B_D11Z is a PNP transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It has a maximum power dissipation of 500mW and operates over a temperature range of -65°C to 150°C. The device is packaged in a TO-226-3 case and is available in quantities of 2000 on tape and reel. The transistor has a gain bandwidth product of 150MHz and a transition frequency of 150MHz.
Frequency150MHz
PackageTO-226-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC557B_D11Z technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
| Series | BC557 |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC557B_D11Z Datasheet
Download the complete datasheet for Onsemi BC557B_D11Z to view detailed technical specifications.
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