The BC557BTAR is a PNP transistor from Onsemi, packaged in a TO-92-3 case and available in quantities of 2000. It has a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. The transistor can handle a maximum power dissipation of 500mW and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and suitable for use in applications requiring a PNP transistor with a high current gain.
Sign in to ask questions about the Onsemi BC557BTAR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC557BTAR technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC557BTAR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
