The BC558TA is a PNP transistor from Onsemi, packaged in a TO-92-3 case for through-hole mounting. It has a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. The transistor operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 500mW. It is RoHS compliant and available in quantities of 2000 in an ammo pack.
Sign in to ask questions about the Onsemi BC558TA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC558TA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC558TA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
