The BCW60B_Q transistor is a SOT-23 packaged NPN device with a maximum collector-emitter voltage of 32V and a maximum collector current of 100mA. It has a maximum power dissipation of 350mW and operates up to 150°C. The device has a gain bandwidth product of 125MHz and a minimum current gain of 20. It is available in quantities of 3000 on tape and reel.
PackageSOT-23
PolarityNPN
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Technical Specifications
Onsemi BCW60B_Q technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Saturation Voltage | 32V |
| Collector-emitter Voltage-Max | 32V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 125MHz |
| hFE Min | 20 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Series | BCW60B |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BCW60B_Q Datasheet
Download the complete datasheet for Onsemi BCW60B_Q to view detailed technical specifications.
No datasheet is available for this part.