MOSFET P-Channel Enhance
Onsemi BSS84_Q technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 130mA |
| Drain to Source Breakdown Voltage | 50V |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Turn-Off Delay Time | 10ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
