PackageSMD/SMT
MountingSurface Mount
Power250mW
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Technical Specifications
Onsemi CNY17-1S-M technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Current Transfer Ratio | 80% |
| Fall Time | 20000ns |
| Forward Current | 60mA |
| Input Type | DC |
| Isolation Voltage | 5.25kV |
| Lead Free | Lead Free |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| Weight | 0.81g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CNY17-1S-M Datasheet
Download the complete datasheet for Onsemi CNY17-1S-M to view detailed technical specifications.
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