Automotive N-channel enhancement mode power MOSFET, 600V drain-source voltage, 20A continuous drain current. Features 195mΩ maximum drain-source on-resistance at 10V gate-source voltage and 78nC typical gate charge. Surface-mount D2PAK (TO-263AB) package with gull-wing leads, 3 pins, and a tab. Operates from -55°C to 150°C with a maximum power dissipation of 405W.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Onsemi FCB20N60F-F085 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
20A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
195@10VmOhm
Typical Gate Charge @ Vgs
78@10VnC
Typical Gate Charge @ 10V
78nC
Typical Input Capacitance @ Vds
2305@25VpF
Maximum Power Dissipation
405000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
PPAP
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FCB20N60F-F085 Datasheet
Download the complete datasheet for Onsemi FCB20N60F-F085 to view detailed technical specifications.
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