The FDB045AN08A0_Q is an N-channel power MOSFET from Onsemi with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 75V and a continuous drain current of 80A. The device has a power dissipation of 310W and a drain to source resistance of 3.9mR. The FET has a fast switching time with a fall time of 45ns and a turn-off delay time of 40ns.
PackageTO-263AB
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FDB045AN08A0_Q technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 3.9mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDB045AN08A0_Q Datasheet
Download the complete datasheet for Onsemi FDB045AN08A0_Q to view detailed technical specifications.
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