N-Channel MOSFET, PowerTrench® series, featuring 200V drain-source breakdown voltage and 62A continuous drain current. Offers a low 27mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Designed for surface mounting in a TO-263 package, this single-element transistor boasts a maximum power dissipation of 260W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 77ns and fall time of 162ns.
PackageTO-263
Current Rating62A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDB2614 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
62A
Current Rating
62A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
22.9mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
27MR
Dual Supply Voltage
200V
Element Configuration
Single
Fall Time
162ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
7.23nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
260W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
260W
Rds On Max
27mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
103ns
Turn-On Delay Time
77ns
DC Rated Voltage
200V
Weight
1.31247g
Width
11.33mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDB2614 Datasheet
Download the complete datasheet for Onsemi FDB2614 to view detailed technical specifications.
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