The FDB3632_Q is a high-power N-channel power MOSFET from Onsemi, featuring a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 80A and a drain to source breakdown voltage of 100V. The device is packaged in a TO-263AB package and is available on tape and reel. The FDB3632_Q has a drain to source resistance of 75mR and a fall time of 46ns. It can handle a maximum power dissipation of 310W.
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| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 75mR |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Turn-Off Delay Time | 96ns |
| RoHS | Not Compliant |
