The FDB6670AL_Q is a TO-263AB packaged N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It has a continuous drain current of 80A and a drain to source breakdown voltage of 30V. The device also features a drain to source resistance of 6.5mR and a power dissipation of 68W. The FDB6670AL_Q is suitable for high-temperature applications and is available in tape and reel packaging.
Onsemi FDB6670AL_Q technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.5mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Turn-Off Delay Time | 42ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
