N-Channel PowerTrench® MOSFET, surface mount, featuring 60V drain-source breakdown voltage and 50A continuous drain current. Offers low 13mΩ drain-source resistance at a nominal 4V gate-source voltage. Designed for high efficiency with a maximum power dissipation of 115W and operating temperature up to 175°C. Packaged in TO-252AA on a 2500-piece tape and reel.
PackageTO-252AA
Current Rating9.9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDD13AN06A0 technical specifications.
General
Package/Case
TO-252AA
Continuous Drain Current (ID)
50A
Current Rating
9.9A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
11.5mR
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
115W
Radiation Hardening
No
Rds On Max
13.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
26ns
Turn-On Delay Time
9ns
DC Rated Voltage
60V
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD13AN06A0 Datasheet
Download the complete datasheet for Onsemi FDD13AN06A0 to view detailed technical specifications.
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