This P-channel MOSFET features a drain to source breakdown voltage of -20V and a continuous drain current of -3.3A. It has a drain to source resistance of 125mR and a gate to source voltage of 20V. The device operates over a temperature range of -55°C to 150°C and has a power dissipation of 2W. It is available in a SO package, packaged on a tape and reel.
PackageSO
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDFS2P102_Q technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | -3.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 125mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 17ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDFS2P102_Q Datasheet
Download the complete datasheet for Onsemi FDFS2P102_Q to view detailed technical specifications.
No datasheet is available for this part.