The FDFS2P106A_Q is a P-channel FET from Onsemi with a drain to source breakdown voltage of -60V and a continuous drain current of -3A. It features a drain to source resistance of 110mR and a power dissipation of 2W. The device operates over a temperature range of -55°C to 150°C and is available in tape and reel packaging.
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDFS2P106A_Q technical specifications.
General
| Continuous Drain Current (ID) | -3A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 110mR |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDFS2P106A_Q Datasheet
Download the complete datasheet for Onsemi FDFS2P106A_Q to view detailed technical specifications.
No datasheet is available for this part.