The FDG327N_Q is an N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 1.5A and a drain to source breakdown voltage of 20V. The device features a drain to source resistance of 90mR and a power dissipation of 420mW. The FDG327N_Q is available in tape and reel packaging.
PolarityN-CHANNEL
Power420mW
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Technical Specifications
Onsemi FDG327N_Q technical specifications.
General
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 90mR |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 420mW |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG327N_Q Datasheet
Download the complete datasheet for Onsemi FDG327N_Q to view detailed technical specifications.
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