The FDG6322C_Q is a P-channel MOSFET with a drain to source breakdown voltage of 25V and a continuous drain current of -410mA. It has a drain to source resistance of 1.1 ohms and a power dissipation of 300 milliwatts. The device operates over a temperature range of -55°C to 150°C and is available in tape and reel packaging.
PolarityP-CHANNEL
Power300mW
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Technical Specifications
Onsemi FDG6322C_Q technical specifications.
General
| Continuous Drain Current (ID) | -410mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.1R |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG6322C_Q Datasheet
Download the complete datasheet for Onsemi FDG6322C_Q to view detailed technical specifications.
No datasheet is available for this part.