The FDI047AN08A0_F085 is a N-CHANNEL MOSFET from Onsemi with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 75V and a continuous drain current of 15A. The device is packaged in a TO-262 case and has a power dissipation of 310W. The FDI047AN08A0_F085 also has a gate to source voltage of 20V and a drain to source resistance of 4.7mR.
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Onsemi FDI047AN08A0_F085 technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.7mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Turn-Off Delay Time | 40ns |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDI047AN08A0_F085 to view detailed technical specifications.
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