The FDI2532_Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 150V and a continuous drain current of 79A. The device has a drain to source resistance of 16mR and a power dissipation of 310W. The FDI2532_Q is packaged in a TO-262 package and is available in rail or tube packaging.
PackageTO-262
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FDI2532_Q technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 79A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 16mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Turn-Off Delay Time | 39ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDI2532_Q Datasheet
Download the complete datasheet for Onsemi FDI2532_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.