The FDN304PZ_Q is a P-channel MOSFET with a breakdown voltage of -20V and a continuous drain current of -2.4A. It has a drain to source resistance of 52 milliohms and a power dissipation of 500 milliwatts. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel form.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDN304PZ_Q datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | -2.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 52mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 40ns |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDN304PZ_Q to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.