The FDN337N_Q is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 2.2A and a power dissipation of 500mW. The device has a drain to source breakdown voltage of 30V and a drain to source resistance of 65mR. The FDN337N_Q also features a gate to source voltage of 8V and a fall time of 10ns.
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Onsemi FDN337N_Q technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 65mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 17ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDN337N_Q Datasheet
Download the complete datasheet for Onsemi FDN337N_Q to view detailed technical specifications.
No datasheet is available for this part.