The FDP060AN08A0_Q is a TO-220AB packaged N-channel power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a drain to source breakdown voltage of 75V. The device also features a drain to source resistance of 4.8mR and a power dissipation of 255W. It is available in rail/Tube packaging and has a gate to source voltage of 20V.
PackageTO-220AB
Resistance6R
PolarityN-CHANNEL
Power255W
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Technical Specifications
Onsemi FDP060AN08A0_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.8mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 255W |
| Resistance | 6R |
| Turn-Off Delay Time | 37ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP060AN08A0_Q Datasheet
Download the complete datasheet for Onsemi FDP060AN08A0_Q to view detailed technical specifications.
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