The FDP3632_Q is a high-power N-CHANNEL MOSFET from Onsemi, featuring a TO-220AB package and a maximum operating temperature range of -55°C to 175°C. It can handle a continuous drain current of up to 80A and a power dissipation of 310W. The device has a drain to source breakdown voltage of 100V and a gate to source voltage of 20V. It also exhibits a fall time of 46ns and a turn-off delay time of 96ns.
PackageTO-220AB
Resistance9R
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FDP3632_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Resistance | 9R |
| Turn-Off Delay Time | 96ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP3632_Q Datasheet
Download the complete datasheet for Onsemi FDP3632_Q to view detailed technical specifications.
No datasheet is available for this part.