This N-channel PowerTrench MOSFET is rated for 60 V drain-source voltage and 88 A continuous drain current at 25 °C. It provides 2.91 mΩ typical RDS(on) at 10 V gate drive, 76 nC typical total gate charge, and soft reverse-recovery body-diode behavior for efficient synchronous rectification. The device is housed in a TO-220F full-pack package and supports operation from -55 °C to 175 °C junction temperature. It is intended for ATX, server, and telecom power supplies, battery protection, motor drives, uninterruptible power supplies, and renewable systems. It is RoHS compliant.
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Onsemi FDPF035N06B technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 88A |
| Continuous Drain Current (Tc=100°C) | 62A |
| Pulsed Drain Current | 352A |
| Power Dissipation | 46.3W |
| Operating Junction Temperature Range | -55 to 175°C |
| RDS(on) Typ @ VGS=10V | 2.91mΩ |
| RDS(on) Max @ VGS=10V | 3.5mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance | 6035pF |
| Total Gate Charge | 76nC |
| Gate-to-Source Charge | 29nC |
| Gate-to-Drain Charge | 12nC |
| Reverse Recovery Time | 71ns |
| Reverse Recovery Charge | 78nC |
| Thermal Resistance Junction-to-Case | 3.24°C/W |
| RoHS | Compliant |
