Dual P-Channel MOSFET, 30V drain-source breakdown voltage, 7A continuous drain current, and 23mΩ drain-source resistance. Features include a 25ns fall time, 13ns turn-on delay, and 48ns turn-off delay. Operates from -55°C to 175°C, with a maximum power dissipation of 2W. Packaged in SOIC for surface mounting, supplied on a 2500-piece tape and reel. RoHS compliant.
PackageSOIC
Voltage30V
Current7A
Current Rating-7A
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Technical Specifications
Onsemi FDS4935A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Current
7A
Current Rating
-7A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
-30V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.233nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
-1.6V
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-1.6V
Turn-Off Delay Time
48ns
Turn-On Delay Time
13ns
Voltage
30V
DC Rated Voltage
-30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS4935A Datasheet
Download the complete datasheet for Onsemi FDS4935A to view detailed technical specifications.
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