The FDS7788_Q is a N-CHANNEL MOSFET with a breakdown voltage of 30V and a continuous drain current of 18A. It can handle a power dissipation of 2.5W and has a drain to source resistance of 3mR. The device has a fall time of 36ns and a turn-off delay time of 62ns. It operates over a temperature range of -55°C to 150°C and is available in tape and reel packaging.
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Onsemi FDS7788_Q technical specifications.
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 62ns |
| RoHS | Not Compliant |
No datasheet is available for this part.
