The FDS9435A_Q is a P-channel enhancement mode MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a drain to source breakdown voltage of -30V and a drain to source resistance of 42mΩ. The device can handle a continuous drain current of up to 5.3A and a power dissipation of 2.5W. The FDS9435A_Q has a gate to source voltage of 25V and a turn-off delay time of 14ns. The device is packaged in tape and reel format.
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS9435A_Q technical specifications.
General
| Continuous Drain Current (ID) | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 42mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS9435A_Q Datasheet
Download the complete datasheet for Onsemi FDS9435A_Q to view detailed technical specifications.
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