The FDT3612_Q is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 3.7A. It has a drain to source resistance of 120R and a gate to source voltage of 20V. The device is packaged in a SOT-223 package and is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PackageSOT-223
PolarityN-CHANNEL
Power3W
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Technical Specifications
Onsemi FDT3612_Q technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 120R |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Turn-Off Delay Time | 23ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDT3612_Q Datasheet
Download the complete datasheet for Onsemi FDT3612_Q to view detailed technical specifications.
No datasheet is available for this part.