The FDU2572_Q is an N-channel MOSFET with a drain to source breakdown voltage of 150V and a continuous drain current of 29A. It has a drain to source resistance of 54 milliohms and a power dissipation of 135W. The device is packaged in a rail/Tube format and has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C.
Resistance0.056R
PolarityN-CHANNEL
Power135W
Quick Jump:
Technical Specifications
Onsemi FDU2572_Q technical specifications.
General
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 54mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Resistance | 0.056R |
| Turn-Off Delay Time | 31ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDU2572_Q Datasheet
Download the complete datasheet for Onsemi FDU2572_Q to view detailed technical specifications.
No datasheet is available for this part.