The FDW2502P_Q is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a continuous drain current of -4.4A. It features a drain to source resistance of 35mR and a power dissipation of 1W. The device is packaged in a TSSOP package and is available in tape and reel packaging. The FDW2502P_Q operates over a temperature range of -55°C to 150°C.
PackageTSSOP
PolarityP-CHANNEL
Power1W
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Technical Specifications
Onsemi FDW2502P_Q technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | -4.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Turn-Off Delay Time | 51ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDW2502P_Q Datasheet
Download the complete datasheet for Onsemi FDW2502P_Q to view detailed technical specifications.
No datasheet is available for this part.
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